IV-SemiteC Single crystal SiC wafer 8 inch 4H-N dummy grade

Specification
*Crystal type: 4H-SiC *Conductivity type: N type *Grade: Dummy *Diameter: 200.0 mm ± 0.2 mm (8 inches) *Thickness: 500 μm ± 25 μm *Off-angle: 4° ± 0.5° relative to [11-20] *Micropipe density (MPD): 10 pcs/cm-2 or less *Resistivity: 0.015-0.028 Ω-cm (75% area) *Notch orientation: [1-100] ± 5.0°, depth 1.0-1.5 mm *Face orientation: {0001} ± 0.2° *Warp: LTV ≤ 10 μm (10*10 mm2), TTV ≤ 15 μm, BOW ≤ 65 μm, WARP ≤ 70 μm *Surface finish: Double-sided CMP, Si surface Epi Ready (Si surface Ra ≤ 0.5 nm) *Edge crack: N/A * Crystalline polymorphism: Cumulative area ≤ 5% * Edge chipping: N/A * Laser marking: Present on the C-side (back side) * Packaging: Each wafer is individually packaged in a single wafer case