INFINEON Non-volatile memory (NVRAM) Infineon

Specification
*Memory Size: 4Mbit*Organization: 512K x 8bit*Interface Type: Parallel*Data Bus Width: 8bit*Maximum Random Access Time: 45ns*Mounting Type: Surface Mount*Package Type: TSOP*Number of Pins: 44*Dimensions: 18.51 x 10.26 x 1.04mm*Length: 18.51mm*Width: 10.26mm*Height: 1.04mm*Maximum Operating Supply Voltage: 3.6V*Maximum Operating Temperature: +85°C*Word Depth: 512Kbit*The Cypress CY14B104LA / CY14B104NA are high-speed static random access memory (SRAM) devices with a nonvolatile element in each memory cell. The memory is organized into 512K bytes of 8-bit blocks and 256K words of 16-bit blocks. The built-in nonvolatile elements incorporate QuantumTrap technology, providing highly reliable nonvolatile memory. The SRAM offers unlimited read/write cycles, and independent nonvolatile data is stored in reliable QuantumTrap cells. Data transfer from the SRAM to the nonvolatile elements (STORE operation) occurs automatically when power is removed. Upon power-up, data is restored from the nonvolatile memory to the SRAM (RECALL operation). Both the STORE and RECALL operations are available under software control.