onsemi onsemi N-Channel MOSFET 60 V 500 mA Through Hole Package TO-92 3 Pin

Specification
*Channel Type: N*Maximum Continuous Drain Current: 500 mA*Maximum Drain-Source Voltage: 60 V*Package Type: TO-92*Mounting Type: Through-Hole*Number of Pins: 3*Maximum Drain-Source Resistance: 5 Ω*Channel Mode: Enhancement*Maximum Gate Threshold Voltage: 3 V*Minimum Gate Threshold Voltage: 0.8 V*Maximum Power Dissipation: 830 mW*Transistor Configuration: Single*Maximum Gate-Source Voltage: -20 V, +20 V*Number of Elements per Chip: 1 mm*Min. Operating Temperature: -55 °Cmm*Fairchild Semiconductor Enhancement-Mode N-Channel MOSFET. Enhancement-mode field-effect transistors (FETs) are manufactured using Fairchild's proprietary high-cell-density DMOS technology. This high-density process is designed to minimize on-state resistance and provide rugged, reliable performance and fast switching.