INFINEON Infineon N-Channel MOSFET 60 V 375 A Surface Mount Package DirectFET ISOMETRIC

Sebelum PPN:
Rp349.999.900
Spesifikasi
ROHS Directive (Corresponding to 10 Substances)Correspondence

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Informasi Produk

Description
DirectFETR Power MOSFETs, Infineon. DirectFETR Power Packages utilize surface-mount power MOSFET packaging technology. DirectFETR MOSFETs are the solution for shrinking the design footprint for advanced switching applications while reducing energy losses. . Industry's lowest on-resistance in a given footprint. Very low package resistance minimizes conduction losses. Highly efficient double-sided cooling significantly improves power density, cost, and reliability. Low profile of just 0.7 mm
Feature
Specification
Channel Type = N Maximum Continuous Drain Current = 375 A Maximum Drain-Source Voltage = 60 V Series = DirectFET, HEXFET Mounting Type = Surface Mount Maximum Drain-Source Resistance = 1.5 MΩ Channel Mode = Enhancement Maximum Power Dissipation = 125 W Transistor Configuration = Single Maximum Gate-Source Voltage = -20 V, +20 V Width = 7.1 mm Forward Diode Voltage = 1.3 V

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