INFINEON Infineon N-Channel MOSFET 55 V 17 A Through Hole Package TO-220AB 3 Pin

Sebelum PPN:
Rp479.900
Spesifikasi
ROHS Directive (Corresponding to 10 Substances)Correspondence

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Description
Infineon N-Channel Power MOSFET 55 V. Infineon's discrete HEXFETR power MOSFET products are N-Channel devices in surface mount and leaded packages. Form factors accommodate almost any board layout and thermal design challenge. Benchmarks across the entire resistance range lower conduction losses for maximum system efficiency.
Feature
Specification
Channel Type = N Maximum Continuous Drain Current = 17 A Maximum Drain-Source Voltage = 55 V Series = HEXFET Mounting Type = Through-Hole Pin Count = 3 Maximum Drain-Source Resistance = 70 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4 V Minimum Gate Threshold Voltage = 2 V Maximum Power Dissipation = 45 W Transistor Configuration = Single Maximum Gate-Source Voltage = -20 V, +20 V Transistor Material = Si Operating Temperature Min = -55 °Cmm

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