onsemi onsemi N-Channel MOSFET 60 V 12 A Through Hole Package TO-220 3 Pin

Channel Type = N
Maximum continuous drain current = 12 A
Maximum drain-source voltage = 60 V
Package Type = TO-220
Mounting Type = Through Hole Pin Count = 3
Maximum drain-source resistance = 180 mΩ
Channel mode = Enhancement type Minimum gate threshold voltage = 1V
Maximum power consumption = 48 W
Transistor Configuration = Single Maximum Gate-Source Voltage = -15 V, +15 V
Typical gate charge @ Vgs = 7.8 nC @ 5 Vmm
Height = 16.51mm
Fairchild Semiconductor Enhancement Mode N-Channel MOSFETs. Enhancement mode field effect transistors (FETs) are manufactured using Fairchild's proprietary high cell density DMOS technology. This high density process is designed to minimize on-state resistance, providing rugged, reliable performance and fast switching.