onsemi onsemi N-channel MOSFET 60 V 70 A Through-hole Package TO-220AB 3-pin

Channel Type = N
Maximum continuous drain current = 70 A
Maximum drain-source voltage = 60 V
Package Type = TO-220AB
Mounting Type = Through Hole Pin Count = 3
Maximum drain-source resistance = 14 mΩ
Channel mode = Enhancement type Minimum gate threshold voltage = 2V
Maximum power consumption = 150 W
Transistor configuration = Single Maximum gate-source voltage = -20 V, +20 V
Width = 4.83mm
Operating temperature Min = -55°Cmm
Fairchild Semiconductor Enhancement Mode N-Channel MOSFETs. Enhancement mode field effect transistors (FETs) are manufactured using Fairchild's proprietary high cell density DMOS technology. This high density process is designed to minimize on-state resistance, providing rugged, reliable performance and fast switching.