INFINEON Infineon rectifier diode

Specification
Diode configuration: Single, Rectification type: Switching, Peak reverse repetition voltage: 650V, Mounting type: Through hole, Package type: TO-247, Diode technology: Silicon junction, Pin count: 3, Maximum forward voltage drop: 2.3V, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Peak Reverse Recovery Time: 83ns, Operating Temperature Min: -40°C, Fast Switching Emitter Controlled Diode, Infineon. Infineon Switched Emitter Controlled Diode is Rapid 1 and 600 V / 1200 V ultra-soft diode of the Rapid 2 family. These diodes work in a variety of applications including communication, UPS, welding, AC-DC, and the ultra-soft version works in motor drive applications up to 30 kHz. The Rapid 1 diode switches between 18 kHz and 40 kHz. Forward temperature stable: 1.35 V Ideal for power factor correction (PFC) topologies Rapid 2 diodes switch between 40 kHz and 100 kHz. Low reverse recovery charge: forward voltage for BiC performance Short reverse recovery time Low turn-on loss of boost switch Ultra-fast diode 600 V / 1200 V Emitter control technology Meets JEDEC standard Excellent EMI protection Low conduction loss Easy parallel connection