INFINEON Infineon Dual P-Channel Power MOSFET

Sebelum PPN:
Rp639.900 - Rp729.900
Spesifikasi
ROHS Directive (Corresponding to 10 Substances)Correspondence

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Informasi Produk

Feature
Specification
Infineon OptiMOSTM PP-Channel Power MOSTM ET. Channel Type: P, Maximum Continuous Drain Current: 2V, Maximum Drain-Source Voltage: 30Ω, Maximum Drain-Source Resistance: 130mΩ, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2V, Maximum Gate-Source Voltage: -20V, +20Ω, Package Type: TSOP, Mounting Type: Surface Mount, Transistor Configuration: Isolated, Channel Mode: Enhancement, Category: Power MOSTM ET, Maximum Power Dissipation: 500mW, Typical Gate Charge Vgs: 5nC, 10Ω. Infineon OptiMOSTM P-Channel Power MOSTM ET is designed to offer enhanced features tailored for high performance. Features include ultra-low switching loss, on-state resistance, and avalanche ratings, as well as AEC qualification for automotive solutions. Applications include dc-dc, motor control, automotive, and eMobility. Enhanced mode Avalanche rated Low switching and conduction losses Lead-free plating, RoHS compliant Standard package OptiMOSTM P-channel series: -55 +175°C temperature range

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