INFINEON Infineon Dual N-Channel Power MOSFET

Specification
Channel type: N * Maximum continuous drain current: 8.1 A * Maximum drain-source voltage: 30 V * Maximum drain-source resistance: 23 mΩ * Maximum gate threshold voltage: 1.1 V * Minimum gate threshold voltage: 0.5V * Maximum gate-source voltage: -12 V, +12 V * Package type: SOIC * Mounting type: Surface mount * Pin count: 8 * Channel mode: Enhancement type * Category: Power MOSFET * Maximum power consumption: 2 W * Standard turn-on delay time: 5.9 ns * Dual N-channel power MOSFET, Infineon. Infineon's dual power MOSFET integrates two HEXFETR devices, so in a high component density design where board space is a priority It provides a space-saving and cost-effective switching solution. A wide variety of packaging options allow designers to choose a dual N-channel configuration.