INFINEON Infineon P-channel small signal MOSFET

Specification
Channel type: P , Maximum continuous drain current: 1.18 A , Maximum drain-source voltage: 20 V , Maximum drain-source resistance: 280 mΩ , Maximum gate threshold voltage : 0.6V , Minimum gate threshold voltage: 1.2V , Maximum gate-source voltage: -12 V, + 12 V , Package type: SOT-23 , Mounting type: Surface mounting , Number of pins: 3 , Channel mode: Enhancement type , Category: Small signal , Maximum power consumption: 500 mW , Standard turn-on delay time: 6.7 ns , Infineon OptiMOS (TM) P P Channel Power MOSFETs. Infineon OptiMOS (TM) P Channel Power MOSFETs are designed to provide enhanced features for high performance. Features including ultra-low switching loss, on-state resistance, and avalanche ratings, as well as AEC certification for automotive solutions. Applications include dc-dc, motor control, in-vehicle, and eMobility. Reinforced mode Avalanche rating Low switching loss and conductivity loss Lead-free plating, RoHS compliant Standard package OptiMOS (TM) P channel series: -55 -> +175 °C temperature range