INFINEON Infineon P-channel power MOSFET

Sebelum PPN:
Rp169.900 - Rp179.999.900

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Feature
Specification
Channel type: P * Maximum continuous drain current: 15 A * Maximum drain-source voltage: 30 V * Maximum drain-source resistance: 11.2 mΩ * Maximum gate threshold voltage: 2.4 V * Minimum gate threshold voltage: 1.3V * Maximum gate-source voltage: -20 V, +20 V * Package type: SOIC * Mounting type: Surface mounting * Transistor configuration: Single * Channel mode: Enhancement type * Category: Power MOSFET * Maximum power consumption: 2.5 W * Dimensions: 5 x 4 x 1.5mm * P-Channel Power MOSFET 30 V, Infineon. Infineon's Discrete HEXFETR Power MOSFET products include P-Channel devices in leaded surface mount packages and almost any board layout or Includes a form factor to meet your thermal design challenges. Conductive resistance benchmarks across the entire range reduce conduction losses for optimum system efficiency.

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