INFINEON Infineon P-channel MOSFET

Sebelum PPN:
Rp849.900
Spesifikasi
ROHS Directive (Corresponding to 10 Substances)Correspondence

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Feature
Specification
Channel type: P * Maximum continuous drain current: 2.9 A * Maximum drain-source voltage: 60 V * Maximum drain-source resistance: 130 mΩ * Maximum gate threshold voltage: 4 V * Minimum gate threshold voltage: 2.1 V * Maximum gate-source voltage: -20 V, +20 V * Package type: SOT-223 * Mounting type: Surface mount * Pin count: 3 + Tab * Channel mode: Enhancement type * Maximum power consumption: 10.8 W * Number of elements per chip: 1 * Infineon SIPMOS(R) P-channel MOSFET. Infineon SIPMOS(R) small-signal P-channel MOSFET features enhanced mode, continuous drain current down to -80 A, and wide operating temperature range. SIPMOS power transistors can be used in a variety of applications including the automotive industry, as well as communications, eMobility, notebooks, DC / DC devices. . . AEC Q101 compliant (see data sheet) . Lead-free plating, RoHS compliant

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