INFINEON Infineon N-Channel Power MOSFET

Specification
Channel type: N, maximum continuous drain current: 100 A, maximum drain-source voltage: 40 V, maximum drain-source resistance: 0.0019 Ω, maximum gate threshold voltage: 4V, minimum gate threshold Voltage: 2V, Maximum gate-source voltage: -20 V, + 20 V, Package type: PG-TDSON, Mounting type: Surface mounting, Number of pins: 8, Channel mode: Enhancement type, Category: Power MOSFET , Maximum power consumption: 125 W, Number of elements per chip: 1, Infineon OptiMOS (TM) 3 power MOSFET, Maximum 40 V. OptiMOS (TM) products can be used for the most difficult applications It is housed in a high-performance package. This gives you maximum flexibility in a confined space. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of next-generation stringent voltage regulation standards for computing applications. For high-speed switching MOSFETs and SMPS Technology optimized for DC / DC converters Compatible with JEDEC1 for target applications N channels, logic level Excellent gate charge x R DS (on) products ( FOM) Ultra-low on-resistance R DS (on) Lead-free plating