INFINEON Infineon N-channel MOSFET

Specification
Channel type: N, maximum continuous drain current: 20 A, maximum drain-source voltage: 60 V, maximum drain-source resistance: 12.1 mΩ, maximum gate threshold voltage: 2.2V, minimum gate threshold Value voltage: 1.2V, maximum gate-source voltage: -20 V, + 20 V, package type: TSDSON, mounting type: surface mounting, number of pins: 8, channel mode: enhancement type, maximum power consumption: 69 W, width: 3.4mm, Infineon OptiMOS (TM) 3 power MOSFETs, 60 -> 80 V. OptiMOS (TM) products are high-performance packages that can be used in the most difficult applications. It is stored in. This gives you maximum flexibility in a confined space. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of next-generation stringent voltage regulation standards for computing applications. For high-speed switching MOSFETs and SMPS Technology optimized for DC / DC converters Compatible with JEDEC1 for target applications N channels, logic level Excellent gate charge x R DS (on) products ( FOM) Ultra-low on-resistance R DS (on) Lead-free plating