INFINEON Infineon IGBT

Sebelum PPN:
Rp209.900 - Rp2.899.900
Spesifikasi
ROHS Directive (Corresponding to 10 Substances)Correspondence

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Feature
Specification
Maximum continuous collector current: 150 A , Maximum collector- Emitter voltage: 600 V , Maximum gate-emitter voltage: ± 20V , Maximum power consumption: 428 W , Package type: TO-247 , Mounting type: Through hole , Number of pins: 3 , Transistor configuration: Single , Length: 16.13mm , Width: 21.1mm , Height: 5.21mm , Dimensions: 16.13 x 21.1 x 5.21mm , Operating temperature Max: +175 °C , Infineon TrenchStop IGBT transistor, 600 / 650 V. Infineon's IGBT transistor is It has a rated voltage between collector and emitter of 600 / 650 V and uses Transistor Stop (TM) technology. This product includes devices with fast recovery anti-parallel diodes. Collector-emitter voltage range: 600 -> 650 V VCE sat is very low Turn-off loss is low Short tail current Low EMI Maximum junction temperature: 175 °C

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