OSRAM Opto Semiconductors OSRAM Opto Semiconductors Osram Phototransistor

Specification
Detection spectrum: Infrared * Typical fall time: 14 μs * Typical rise time: 14 μs * Number of channels: 1 * Maximum photocurrent: 12,500 μA * Maximum dark current: 200 nA * Half-width sensitivity angle: 20° * Polarity: NPN * Number of pins: 2 * Mounting type: Through-hole mounting * Package type: 5 mm (T-1 3/4) * Dimensions: 5.9 x 5.9 x 9 mm * Collector current: 50 mA * Minimum detectable wavelength: 740 nm * Phototransistor T-1 3/4 (5 mm) package. This NPN silicon phototransistor family from OSRAM Opto Semiconductors is available in a variety of 5 mm (T-1 3/4) through-hole devices. These products feature clear or black plastic lenses, as well as a diffusing lens for use as a daylight filter. Suitable applications include computer-controlled flashes, photointerrupters, industrial electronics, and control/drive circuits. 5 mm (T-1 3/4) package, through-hole mounting