OSI Optoelectronics Photodiode OSI Optoelectronics UV Si Through-hole mounting Ceramic

Specification
Detection spectrum: UV light * Peak sensitivity wavelength: 980 nm * Package type: Ceramic * Mounting type: Through hole mounting * Pin count: 2 * Diode material: Si * Minimum detection wavelength: 190 nm * Maximum detection wavelength: 1100 nm * Length: 16.51 mm * Width: 14.99mm * Height: 2.03mm * Polarity: Reverse * OSI UV Enhanced Series Photodiodes. OSI Optoelectronics' UV Enhanced series offers a variety of UV-sensitized silicon photodiodes. There are two families of photodiodes in the series: inverting channel and planar diffused. Both families are designed for low noise detection in the UV region of the electromagnetic spectrum. The inversion layer structure family has 100% internal quantum efficiency. With its high shunt resistance, low noise, and high breakdown voltage, this family of photodiodes is ideal for low brightness light measurements. Planar diffused photodiodes have lower capacitance and faster response time than the inversion layer family. In addition, planar diffused photodiodes exhibit photocurrent linearity up to higher optical input power than inversion layer photodiodes. The UV Enhanced series is suitable for applications such as pollution monitoring, medical measuring instruments, UV exposure meters, spectroscopy, water purification, and fluorescence. Features of UV Enhanced series: Inversion layer or planar diffusion type silicon photodiode Excellent UV response