onsemi onsemi Transistor, PNP, Through Hole, -40 A, MJH6287G

Specification
*Transistor type: PNP*Maximum DC collector current: -40 A*Maximum collector-emitter voltage: -100 V*Package type: TO-218*Mounting type: Through hole*Maximum power dissipation: 160 W*Transistor configuration: Single*Maximum collector-base voltage: 100 V*Maximum emitter-base voltage: 5 V*Maximum operating frequency: 1 MHz*Number of pins: 3*Number of elements per chip: 1*Dimensions: 15.2 x 4.9 x 20.35 mm*Darlington bipolar power transistors are designed for general-purpose amplifier and low-speed switching motor control applications. Switching regulator collector-emitter voltage VCEV: 1000 V dc Inverter Fast turn-off time Solenoid 80 ns Inductive fall time 100 C (typical) Relay driver 120 ns Inductive crossover time 100 C (T) Motor control 800 ns Inductive hold time 100 C (T) Deflection circuit 100 C performance specifications: Reverse bias SOA with inductive load switching time based on inductive load saturation voltage leakage current Extended FBSOA rating using ultrafast rectifiers Extremely high RBSOA capability