onsemi onsemi N-Channel MOSFET 55 V 75 A Through Hole Package TO-220AB 3 Pin

Channel Type = N
Maximum continuous drain current = 75 A
Maximum drain-source voltage = 55 V
Series = UltraFET
Mounting Type = Through Hole Pin Count = 3
Maximum drain-source resistance = 8 mΩ
Channel mode = Enhancement type Minimum gate threshold voltage = 2V
Maximum power consumption = 285 W
Transistor configuration = Single Maximum gate-source voltage = -20 V, +20 V
Width = 4.7mm
Operating temperature Min = -55°Cmm
UltraFETR MOSFETs, Fairchild Semiconductor. UltraFETR Trench MOSFETs combine characteristics that deliver benchmark efficiency in power conversion applications. The devices can withstand high energy in avalanche mode, have very short diode reverse recovery times and very small stored charge. Optimized for high frequency, lowest RDS(on), low ESR, low total charge and mirrored gate charge. Applications: High frequency DC-DC converters, switching regulators, motor drivers, low voltage bus switches and power management.