onsemi onsemi N-Channel MOSFET 900 V 8 A Through Hole Package TO-220AB 3 Pin

Channel Type = N
Maximum continuous drain current = 8 A
Maximum drain-source voltage = 900 V
Series = QFET
Mounting Type = Through Hole Pin Count = 3
Maximum drain-source resistance = 1.4 Ω
Channel mode = Enhancement type Minimum gate threshold voltage = 3V
Maximum power consumption = 205000 mW
Transistor configuration = Single Maximum gate-source voltage = -30 V, +30 V
Width = 4.7mm
Operating temperature Min = -55°Cmm
QFETR N-Channel MOSFETs, 6 to 10.9 A, Fairchild Semiconductor. The new QFETR planar MOSFETs from Fairchild Semiconductor use advanced proprietary technology to deliver best-in-class operating performance for a wide range of applications including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDPs), lighting ballasts, and motion control. These products offer low on-resistance (RDS(on)) to reduce on-state losses, and low gate charge (Qg) and output capacitance (Coss) to reduce switching losses. The use of advanced QFETR process technology allows Fairchild to deliver a better figure of merit (FOM) than competing planar MOSFET devices.