onsemi onsemi P-channel MOSFET 200 V 5.2 A Through-hole Package TO-220F 3 Pin

Channel Type = P
Maximum continuous drain current = 5.2 A
Maximum drain-source voltage = 200 V
Series = QFET
Mounting Type = Through Hole Pin Count = 3
Maximum drain-source resistance = 690 mΩ
Channel mode = Enhancement type Minimum gate threshold voltage = 3V
Maximum power consumption = 45 W
Transistor configuration = Single Maximum gate-source voltage = -30 V, +30 V
Length = 10.36mm
Height = 16.07mm
Fairchild Semiconductor QFETR P-Channel MOSFETs. Fairchild Semiconductor's latest QFETR planar MOSFETs use advanced proprietary technology to deliver best-in-class operating performance in a wide range of applications including power supplies, PFC (power factor correction), DC-DC converters, PDP (plasma display panels), lighting ballasts, and motion control. They reduce on-state losses by lowering on-resistance (RDS(on)), and reduce switching losses by lowering gate charge (Qg) and output capacitance (Coss). Using advanced QFETR process technology, they are able to offer a better figure of merit (FOM) than competing planar MOSFET devices.