INFINEON Infineon Schottky barrier diode

Sebelum PPN:
Rp149.900 - Rp81.999.900
Spesifikasi
ROHS Directive (Corresponding to 10 Substances)Correspondence

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Diode configuration: Single , Number of elements per chip: 1 , Peak reverse voltage: 1200V , Mounting type: Through hole , Package type: TO-220 , Diode technology: SiC Schottky , Number of pins: 2 + Tab , Maximum forward voltage drop: 2.85V , Length: 10.2mm , Width: 4.5mm , Height: 15.95mm , Operating temperature Min : -55 °C , thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon. Infineon thinQ! (TM) 5th generation adopts new thin wafer technology for SiC Schottky barrier diode and heat The characteristics are improved. SiC Schottky diode devices have features for high voltage power semiconductors, such as high breaking field strength and thermal conductivity for better efficiency levels. This latest generation is suitable for communication SMPS, high-end servers, UPS systems, motor drives, solar inverters, PC silver boxes, lighting applications and more. EMI mitigation

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